Potential Distribution in Functionalized Graphene Devices Probed by Kelvin Probe Force Microscopy

Citation:

Yan, L. ; Punckt, C. ; Aksay, I. A. ; Mertin, W. ; Bacher, G. Potential Distribution in Functionalized Graphene Devices Probed by Kelvin Probe Force Microscopy. In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors; Ihm, J. ; Cheong, H., Ed. American Institute of Physics, 2011; Vol. 1399.

Series Title:

AIP Conference Proceedings

ISBN Number:

978-0-7354-1002-2

Accession Number:

WOS:000301053000389

Abstract:

Kelvin probe force microscopy was used to study the impact of contacts and topography on the local potential distribution on contacted, individual functionalized graphene sheets (FGS) deposited on a SiO2/Si substrate. Negligible contact resistance is found at the graphene/Ti interface and a graphene resistance of 2.3 k Omega is extracted for a single sheet with sub-mu m size. Pronounced steps in the topography, which we attribute to a variation of the spacing between graphene and substrate, result in a significant change of the local resistivity.

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